The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[13p-B4-1~9] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 4:15 PM - 6:30 PM B4 (6B-104)

4:30 PM - 4:45 PM

△ [13p-B4-2] Understanding of increase/ decrease mechanism of Dit for SiO2/4H-SiC(0001) by low temperature O2 annealing

〇Heihachiro Kikuchi1, Koji Kita2 (1.Univ. of Tokyo, 2.JST-PRESTO)

Keywords:SiC,SiO2,MOS