[13p-B4-1~9] 15.6 Group IV Compound Semiconductors

△ [13p-B4-6] Failure mechanism analysis of 4H-SiC MOSFETs under high temperature bias test

〇Kosuke Uchida¹, Toru Hiyoshi¹, Taro Nishiguchi¹, Hirofumi Yamamoto¹, Shinji Matsukawa¹, Masaki Furumai¹, Yasuki Mikamura¹ (1.Sumitomo Electric)

Keywords:silicon carbide,MOSFET,reliability