The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[13p-B4-1~9] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 4:15 PM - 6:30 PM B4 (6B-104)

5:45 PM - 6:00 PM

△ [13p-B4-7] Effect of NO Annealing on Flatband Voltage Instability in SiC MOS Devices

〇Yoshihito Katsu1, Takuji Hosoi1, Yuichiro Nanen2, Tsunenobu Kimoto2, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ., 2.Kyoto Univ.)

Keywords:Power Devices,SiC MOS,NO annealing