[13p-B4-1~9] 15.6 Group IV Compound Semiconductors

[13p-B4-9] Gamma-ray Irradiation Effect on SiC MOSFETs with Gate-Bias Voltage

〇Koichi Murata^{1, 2}, Satoshi Mitomo^{1, 2}, Takuma Matsuda^{1, 2}, Takashi Yokoseki^{1, 2}, Takahiro Makino², Hiroshi Abe², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd.)

Keywords:Silicon Carbide,MOSFET,Gamma-ray