dc Bias Voltage Dependence of Magnetic Anisotropy in CoFeB/MgO Investigated by Electric Field-Induced Ferromagnetic Resonance

Shun Kanai

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10 Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[13p-D11-1~8] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Fri. Mar 13, 2015 4:15 PM - 6:15 PM D11 (16-306)

5:00 PM - 5:15 PM

[13p-D11-4] dc Bias Voltage Dependence of Magnetic Anisotropy in CoFeB/MgO Investigated by Electric Field-Induced Ferromagnetic Resonance

〇Shun Kanai^1,³, Martin Gajek², Daniel Worledge², Fumihiro Matsukura^1,^3,⁴, Hideo Ohno^1,^3,⁴ (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.IBM TJ Watson Research Center, 3.CSIS, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

Keywords:spintronics,electric field effect on magnetism,magnetic tunnel junction