〇Hirofumi Suto¹, Kiwamu Kudo¹, Tazumi Nagasawa¹, Taro Kanao¹, Koichi Mizushima¹, Rie Sato¹, Satoshi Okamoto², Nobuaki Kikuchi², Osamu Kitakami², Takehito Shimatsu² (1.Toshiba R&D Center, 2.Tohoku Univ.)

〇Kiwamu Kudo¹, Hirofumi Suto¹, Nagasawa Tazumi¹, Mizushima Koichi¹, Sato Rie¹ (1.Toshiba Corporation)

〇Yoichi Shiota^{1, 2, 3}, Shinji Miwa^{2, 3}, Shingo Tamaru¹, Takayuki Nozaki^{1, 3}, Hitoshi Kubota^{1, 3}, Akio Fukushima^{1, 3}, Yoshishige Suzuki^{1, 2, 3}, Shinji Yuasa^{1, 3} (1.AIST Spintronics RC, 2.Osaka Univ., 3.JST-CREST)

〇Shun Kanai^{1, 3}, Martin Gajek², Daniel Worledge², Fumihiro Matsukura^{1, 3, 4}, Hideo Ohno^{1, 3, 4} (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.IBM TJ Watson Research Center, 3.CSIS, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

〇Eriko Hirayama¹, Shun Kanai¹, Jun-ichiro Ohe², Hideo Sato^{3, 4}, Fumihiro Matsukura^{1, 3, 5}, Hideo Ohno^{1, 3, 4, 5} (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.Department of Physics, Toho Univ., 3.CSIS, Tohoku Univ., 4.CIES, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ.)

〇Ryusuke Oishi¹, Kazuki Segawa¹, Koji Kita¹ (1.The Univ. of Tokyo)

〇(DC)HONGYU AN¹ (1.Titech)

〇Kouki Shinohara¹, Takahiro Suzuki¹, Yota Takamura¹, Shigeki Nakagawa¹ (1.Dept. of Phys. Electron., Tokyo Tech.)

〇Hiromi Yuasa¹ (1.TOSHIBA)

〇Hiroaki Sukegawa¹, Koichiro Inomata¹, Seiji Mitani¹ (1.NIMS)

〇Takao Furubayashi¹, Yukiko Takahashi¹, Taisuke Sasaki¹, Kazuhiro Hono¹ (1.NIMS)

Hiroyuki Narisawa¹, 〇Takahide Kubota¹, Koki Takanashi¹ (1.IMR, Tohoku Univ.)

〇(D)YE DU^{1, 2}, Takao Furubayashi², Yukiko Takahashi², Yuya Sakuraba², Kazuhiro Hono^{1, 2} (1.Univ. of Tsukuba, 2.NIMS)

〇(D)Bing Hu¹, Takeshi Kawami¹, Kidist Moges¹, Tetsuya Uemura¹, Masafumi Yamamoto¹ (1.Hokkaido Univ.)

〇(D)Jiamin CHEN^{1, 2}, Takao Furubayashi¹, Yukiko Takahashi¹, Taisuke Sasaki¹, Kazuhiro Hono^{1, 2} (1.NIMS, 2.Tsukuba Univ.)