[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

[13p-P17-11] Fabrication of GaN Varactor Diode

Tokio Takahashi¹, Yuichi Sakamura¹, Hiroshi Chonan¹, Maki Kiuchi¹, Toshihide Ide¹, Xu-Qiang Shen¹, 〇Mitsuaki Shimizu¹, Taro Itatani¹, Masao Shimada² (1.AIST, 2.RF Dev. Techn.)

Keywords:GaN,Varactor diode