[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

△ [13p-P17-7] Impact on Drain Depletion Region in InAlN/GaN HEMTs with Slant Field Plates

〇Nana Yasukawa¹, Shinya Hatakeyama¹, Tomohiro Yoshida¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC Tohoku Univ.)

Keywords:GaN HEMT,Slant Field Plates