The 62nd JSAP Spring Meeting, 2015

Presentation information

Print

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

4:30 PM - 6:30 PM

[13p-P17-8] Pulsed I-V characteristics of AlGaN/GaN HEMTs with bias controllable Field Plate

〇Suguru Mase1, Takashi Egawa1, Akio Wakejima1 (1.Nagoya Inst. of Tech.)

Keywords:GaN,HEMT,Field Plate