[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

[13p-P17-9] Continuous Current Characteristics of GaN Polarization Super Junction (PSJ) Transistors on Sapphire substrate

〇Sota Matsumoto¹, Shoko Hirata¹, Fumihiko Nakamura¹, Takeru Saito¹, Keiichi Ichimaru¹, Syuichi Yagi¹, Hiroji Kawai¹ (1.POWDEC K.K.)

Keywords:GaN,FET