[14a-A24-1~12] 13.3 Insulator technology

▼ [14a-A24-12] Design of High-k and Interfacial Layer on Germanium for 0.5 nm EOT

〇Cimang Lu^{1, 2}, Choong Hyun Lee^{1, 2}, Tomonori Nishimura^{1, 2}, Kosuke Nagashio^{1, 2}, Akira Toriumi^{1, 2} (1.The Univ. of Tokyo, 2.JST-CREST)

Keywords:Germanium,EOT scaling,High-k