The 62nd JSAP Spring Meeting, 2015

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[14a-A24-1~12] 13.3 Insulator technology

Sat. Mar 14, 2015 9:00 AM - 12:15 PM A24 (6A-217)

9:15 AM - 9:30 AM

[14a-A24-2] Improvement of GeO2/Ge Interface Characteristic by Hf-Post Metallization Annealing

〇Jumpei Niida1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri. & Tech.)

Keywords:germanium,hafnium