Poster presentation

[12a-P12-1~7] 13.3 Insulator technology

Thu. Mar 12, 2015 9:30 AM - 11:30 AM P12 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[12a-P12-1] First principles study on atomic defects in insulators of MONOS memory

〇Shirakawa Hiroki¹, Masaaki Araidai², Katsumasa Kamiya³, Kenji Shiraishi² (1.Univ. of Tsukuba, 2.Nagoya Univ, 3.Kanagawa Inst. of Tech)

9:30 AM - 11:30 AM

[12a-P12-2] Evaluation of hole trapping characteristics of MONOS structures using the constant current carrier injection method

〇(M1)Shin Tanaka¹, Shinji Naito¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

9:30 AM - 11:30 AM

▲ [12a-P12-3] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics

〇(D)SheikhRashel Ahmed¹, Shinji Naito², Hironori Shibayama³, Jyunya Nakamura³, Kyoteru Kobayashi^1,^2,³ (1.GRAD SCH S&T, Tokai Univ, 2.GRAD SCH Eng, Tokai Univ, 3.SCH Eng, Tokai Univ.)

9:30 AM - 11:30 AM

[12a-P12-4] Electrical Measurements of ALD-Al₂O₃ MOS Capacitors with Different Oxidants

〇RYO FUKUI¹, Yoshinori Nakamura¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech.FRC, 2.Tokyo Tech.IGSSE)

9:30 AM - 11:30 AM

[12a-P12-5] Penetration of ammonia molecules in silocon oxide layer with deficits

〇Tomoki Oku¹, Totsuka Masahiro¹, Shiga Toshihiko¹, Watanabe HItoshi¹ (1.Mitsubishi Electric)

9:30 AM - 11:30 AM

▲ [12a-P12-6] Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks

〇(D)ChihYu Chang^1,³, Osamu Ichikawa^2,³, Takenori Osada^2,³, Hisashi Yamada^2,³, Mitsuru Takenaka^1,³, Shinichi Takagi^1,³ (1.The Univ. of Tokyo, 2.Sumitomo Chemical, 3.JST-CREST)

9:30 AM - 11:30 AM

[12a-P12-7] Study on the formation of Al germanate on Ge substrate by radical-enhanced ALD

Tomoya Yokohira¹, 〇Kousei Yanachi¹, Byeonghak Yoo², Chiaya Yamamoto², Junji Yamanaka², Tetsuya Sato², Hiroshi Okamoto³, Yukio Fukuda¹ (1.Tokyo Univ. of Science, Suwa, 2.Univ. of Yamanashi, 3.Hirosaki Univ.)

Oral presentation

[13a-A24-1~13] 13.3 Insulator technology

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A24 (6A-217)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [13a-A24-1] Passivation of silicon surfaces by heat treatment in liquid water at 110^oC

〇Tomohiko Nakamura¹, Toshiyuki Sameshima¹, Masahiko Hasumi¹, Tomohisa Mizuno² (1.TUAT, 2.Kanagawa Univ.)

9:15 AM - 9:30 AM

[13a-A24-2] Properties of anodic SiO₂ film fabricated in high-pressure steam

〇(M1C)Daiki Tehara¹, Tomoaki Owase¹, Yan Wu¹, Yoshihiro takahashi¹ (1.Nihon Univ.)

9:30 AM - 9:45 AM

[13a-A24-3] Fabrication and Evaluation of SiO₂/Si Structures by Kr/O₂Plasma Oxidation at Low Temperature

〇yuta fujikawa¹, yoshitaka iwazaki¹, tomo ueno¹ (1.TAT)

9:45 AM - 10:00 AM

[13a-A24-4] Small-Polaron Variable Range Hopping Including Multi-Phonon Transition

〇Michiru Hogyoku¹, Hiroyoshi Tanimoto¹, Nobutoshi Aoki¹, Kazunari Ishimaru¹ (1.Toshiba Corporation Semiconductor & Storage Products Company)

10:00 AM - 10:15 AM

[13a-A24-5] Evaluation of Physical Properties of SiO₂/Si Interfaces Deduced from XANES

〇Maho Moriya^1,², Daisuke Kobayashi², Tomoyuki Yamamoto¹, Kazuyuki Hirose² (1.Waseda Univ., 2.ISAS/JAXA)

10:15 AM - 10:30 AM

[13a-A24-6] An in-situ Video Recording Investigation on the Formation Mechanism of Carpet-Bombing-like Concaves Formed during Time-Zero Dielectric Breakdown

〇Soushi Sato¹, Yuki Hiroi², Kikuo Yamabe², Makoto Kitabatake³, Tetsuo Endoh^1,^4,⁵, Masaaki Niwa¹ (1.CIES, Tohoku Univ., 2.Univ. Tsukuba, 3.FUPET, 4.CSIS, Tohoku Univ., 5.Tohoku Univ.)

10:30 AM - 10:45 AM

▲ [13a-A24-7] Effectiveness of surface potential fluctuation for representing inversion-layer mobility limited by Coulomb scattering in MOSFETs

〇(D)Weili Cai^1,², Mitsuru Takenaka^1,², Shinichi Takagi^1,² (1.Tokyo Univ., 2.JST CREST)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

△ [13a-A24-8] Improvement of Insulating Property of Al₂O₃ Film Utilizing Water Plasma Oxidation for ALD

〇Tomoaki Umehara¹, Masahiro Horita¹, Koji Yoshitsugu¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

11:15 AM - 11:30 AM

[13a-A24-9] Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO₂ Interface (2): Reproduction of Dipole at MgO/SiO₂ Disobeying Oxygen Density Accommodation Model

〇Ryota Kunugi¹, Masahiro Hashiguchi¹, Kosuke shimura¹, Atsushi Ogura^3,⁵, Shinichi Satoh^4,⁵, Takanobu Watanabe^1,^2,⁵ (1.Waseda Univ., 2.Waseda-INN, 3.Meiji Univ., 4.University of Hyogo, 5.JST-CREST)

11:30 AM - 11:45 AM

[13a-A24-10] Hydrogen Distribution Analysis in Al₂O₃ Film by Atom Probe Tomography

〇Yasuo Shimizu¹, Bin Han¹, Koji Inoue¹, Fumiko Yano², Masao Inoue³, Yorinobu Kunimune⁴, Yasuhiro Shimada⁴, Toshiharu Katayama⁴, Takashi Ide⁴, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Tokyo City Univ., 3.Renesas, 4.RSMC)

11:45 AM - 12:00 PM

▼ [13a-A24-11] Patterning of High-k/metal gate Stack by Neutral Beam Etching Technique for Sub-20 nm CMOS Technology

〇YinHsien Su^1,², JiaNan Shih¹, Tomohiro Kubota², WenHsi Lee¹, YingLang Wang³, Seiji Samukawa² (1.National Cheng Kung Univ., 2.Tohoku Univ., 3.TSMC)

12:00 PM - 12:15 PM

▲ [13a-A24-12] In-situ Formation of HfN_x Gate Stack Structures Utilizing ECR Plasma Sputtering

〇Atthi Nithi¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Tech.)

12:15 PM - 12:30 PM

[13a-A24-13] Ferroelectric characteristics of HfO₂ in TiN/HfO₂/TiN stack

〇Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

Oral presentation

[14a-A24-1~12] 13.3 Insulator technology

Sat. Mar 14, 2015 9:00 AM - 12:15 PM A24 (6A-217)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-A24-1] Fabrication and evaluation of GeO₂/Ge structures using CVD method

〇Daiki Ogura¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri &Tech.)

9:15 AM - 9:30 AM

[14a-A24-2] Improvement of GeO₂/Ge Interface Characteristic by Hf-Post Metallization Annealing

〇Jumpei Niida¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri. & Tech.)

9:30 AM - 9:45 AM

[14a-A24-3] Improvement of GeNx film by the low temperature anneal

〇Yuji Tanaka¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

9:45 AM - 10:00 AM

[14a-A24-4] Comparison of (100) and (110) SiGe MOS interfaces with plasma post-nitridation

〇(D)Jaehoon Han^1,², Mitsuru Takenaka^1,², Shinichi Takagi^1,² (1.Univ. of Tokyo, 2.JST-CREST)

10:00 AM - 10:15 AM

△ [14a-A24-5] Evidence of emission of Ge atoms from Ge surface during thermal oxidation of Al₂O₃/Ge structure

〇Shigehisa Shibayama^1,², Kaoru Nakajima³, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Kenji Kimura³, Shigeaki Zaima^1,⁴ (1.Nagoya Univ., 2.JSPS, 3.Kyoto Univ., 4.ESI Nagoya Univ.)

10:15 AM - 10:30 AM

[14a-A24-6] Control of fixed oxide charge density by ALD and ECR plasma oxidation

〇Yuta Nagatomi¹, Yuichi Nagaoka¹, Shintaro Tanaka¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima² (1.I-EggS, Kyushu Univ., 2.KASTEC)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [14a-A24-7] Study of pure nitridation process for GaSb surface

〇(M2)Takahiro Gotow^1,², Sachie Fujikawa¹, Hiroki I. Fujishiro¹, Mutsuo Ogura², Tetsuji Yasuda², Tatsuro Maeda^1,² (1.Tokyo Univ. Science, 2.AIST)

11:00 AM - 11:15 AM

△ [14a-A24-8] Influence of acceptor doping in rutile type TiO₂ on Ge

〇(B)Yoshihisa Suzuki¹, Takahiro Nagata², Yoshiyuki Yamashita², Chinnamuthu Paulsamy², Kazuyoshi Kobashi¹, Toshihide Nabatame², Atushi Ogura¹, Toyohiro Chikyow² (1.Meiji Univ., 2.NIMS)

11:15 AM - 11:30 AM

[14a-A24-9] Preparation of Crystalline La₂O₃ high-k/Ge(111) Structure by using Atomic Matching Method

〇Takeshi Kanashima¹, Yasuhiro Kajihara¹, Masato Zenitaka¹, Shinya Yamada¹, Kohei Hamaya¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

[14a-A24-10] Effect of annealing on electrical properties of crystalline La₂O₃/Ge(111) structures

〇Masato Zenitaka¹, Yasuhiro Kajihara¹, Shinya Yamada¹, Kohei Hamaya¹, Takeshi Kanashima¹ (1.Osaka Univ.)

11:45 AM - 12:00 PM

▲ [14a-A24-11] Reliability-aware Germanium Gate Stack Formation by GeO₂Network Modification

〇Cimang Lu^1,², Choong Hyun Lee^1,², Tomonori Nishimura^1,², Kosuke Nagashio^1,², Akira Toriumi^1,² (1.The Univ. of Tokyo, 2.JST-CREST)

12:00 PM - 12:15 PM

▼ [14a-A24-12] Design of High-k and Interfacial Layer on Germanium for 0.5 nm EOT

〇Cimang Lu^1,², Choong Hyun Lee^1,², Tomonori Nishimura^1,², Kosuke Nagashio^1,², Akira Toriumi^1,² (1.The Univ. of Tokyo, 2.JST-CREST)

Sessions

13 Semiconductors » 13.3 Insulator technology

[12a-P12-1~7] 13.3 Insulator technology

[12a-P12-1] First principles study on atomic defects in insulators of MONOS memory

[12a-P12-2] Evaluation of hole trapping characteristics of MONOS structures using the constant current carrier injection method

▲ [12a-P12-3] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics

[12a-P12-4] Electrical Measurements of ALD-Al₂O₃ MOS Capacitors with Different Oxidants

[12a-P12-5] Penetration of ammonia molecules in silocon oxide layer with deficits

▲ [12a-P12-6] Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks

[12a-P12-7] Study on the formation of Al germanate on Ge substrate by radical-enhanced ALD

[13a-A24-1~13] 13.3 Insulator technology

▲ [13a-A24-1] Passivation of silicon surfaces by heat treatment in liquid water at 110^oC

[13a-A24-2] Properties of anodic SiO₂ film fabricated in high-pressure steam

[13a-A24-3] Fabrication and Evaluation of SiO₂/Si Structures by Kr/O₂Plasma Oxidation at Low Temperature

[13a-A24-4] Small-Polaron Variable Range Hopping Including Multi-Phonon Transition

[13a-A24-5] Evaluation of Physical Properties of SiO₂/Si Interfaces Deduced from XANES

[13a-A24-6] An in-situ Video Recording Investigation on the Formation Mechanism of Carpet-Bombing-like Concaves Formed during Time-Zero Dielectric Breakdown

▲ [13a-A24-7] Effectiveness of surface potential fluctuation for representing inversion-layer mobility limited by Coulomb scattering in MOSFETs

△ [13a-A24-8] Improvement of Insulating Property of Al₂O₃ Film Utilizing Water Plasma Oxidation for ALD

[13a-A24-9] Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO₂ Interface (2): Reproduction of Dipole at MgO/SiO₂ Disobeying Oxygen Density Accommodation Model

[13a-A24-10] Hydrogen Distribution Analysis in Al₂O₃ Film by Atom Probe Tomography

▼ [13a-A24-11] Patterning of High-k/metal gate Stack by Neutral Beam Etching Technique for Sub-20 nm CMOS Technology

▲ [13a-A24-12] In-situ Formation of HfN_x Gate Stack Structures Utilizing ECR Plasma Sputtering

[13a-A24-13] Ferroelectric characteristics of HfO₂ in TiN/HfO₂/TiN stack

[14a-A24-1~12] 13.3 Insulator technology

[14a-A24-1] Fabrication and evaluation of GeO₂/Ge structures using CVD method

[14a-A24-2] Improvement of GeO₂/Ge Interface Characteristic by Hf-Post Metallization Annealing

[14a-A24-3] Improvement of GeNx film by the low temperature anneal

[14a-A24-4] Comparison of (100) and (110) SiGe MOS interfaces with plasma post-nitridation

△ [14a-A24-5] Evidence of emission of Ge atoms from Ge surface during thermal oxidation of Al₂O₃/Ge structure

[14a-A24-6] Control of fixed oxide charge density by ALD and ECR plasma oxidation

△ [14a-A24-7] Study of pure nitridation process for GaSb surface

△ [14a-A24-8] Influence of acceptor doping in rutile type TiO₂ on Ge

[14a-A24-9] Preparation of Crystalline La₂O₃ high-k/Ge(111) Structure by using Atomic Matching Method

[14a-A24-10] Effect of annealing on electrical properties of crystalline La₂O₃/Ge(111) structures

▲ [14a-A24-11] Reliability-aware Germanium Gate Stack Formation by GeO₂Network Modification

▼ [14a-A24-12] Design of High-k and Interfacial Layer on Germanium for 0.5 nm EOT

Authentication

Sessions

13 Semiconductors » 13.3 Insulator technology

[12a-P12-1~7] 13.3 Insulator technology

▲ [12a-P12-3] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics

▲ [12a-P12-6] Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks

[13a-A24-1~13] 13.3 Insulator technology

▲ [13a-A24-1] Passivation of silicon surfaces by heat treatment in liquid water at 110oC

▲ [13a-A24-7] Effectiveness of surface potential fluctuation for representing inversion-layer mobility limited by Coulomb scattering in MOSFETs

△ [13a-A24-8] Improvement of Insulating Property of Al2O3 Film Utilizing Water Plasma Oxidation for ALD

▼ [13a-A24-11] Patterning of High-k/metal gate Stack by Neutral Beam Etching Technique for Sub-20 nm CMOS Technology

▲ [13a-A24-12] In-situ Formation of HfNx Gate Stack Structures Utilizing ECR Plasma Sputtering

[14a-A24-1~12] 13.3 Insulator technology

△ [14a-A24-5] Evidence of emission of Ge atoms from Ge surface during thermal oxidation of Al2O3/Ge structure

△ [14a-A24-7] Study of pure nitridation process for GaSb surface

△ [14a-A24-8] Influence of acceptor doping in rutile type TiO2 on Ge

▲ [14a-A24-11] Reliability-aware Germanium Gate Stack Formation by GeO2 Network Modification

▼ [14a-A24-12] Design of High-k and Interfacial Layer on Germanium for 0.5 nm EOT

Authentication

▲ [13a-A24-1] Passivation of silicon surfaces by heat treatment in liquid water at 110^oC

△ [13a-A24-8] Improvement of Insulating Property of Al₂O₃ Film Utilizing Water Plasma Oxidation for ALD

▲ [13a-A24-12] In-situ Formation of HfN_x Gate Stack Structures Utilizing ECR Plasma Sputtering

△ [14a-A24-5] Evidence of emission of Ge atoms from Ge surface during thermal oxidation of Al₂O₃/Ge structure

△ [14a-A24-8] Influence of acceptor doping in rutile type TiO₂ on Ge

▲ [14a-A24-11] Reliability-aware Germanium Gate Stack Formation by GeO₂Network Modification