The 62nd JSAP Spring Meeting, 2015

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[13a-A24-1~13] 13.3 Insulator technology

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A24 (6A-217)

12:00 PM - 12:15 PM

▲ [13a-A24-12] In-situ Formation of HfNx Gate Stack Structures Utilizing ECR Plasma Sputtering

〇Atthi Nithi1, Shun-ichiro Ohmi1 (1.Tokyo Inst. of Tech.)

Keywords:ECR plasma sputtering,High-k gate insulator,Hafnium nitride