The 62nd JSAP Spring Meeting, 2015

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[13a-A24-1~13] 13.3 Insulator technology

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A24 (6A-217)

9:15 AM - 9:30 AM

[13a-A24-2] Properties of anodic SiO2 film fabricated in high-pressure steam

〇(M1C)Daiki Tehara1, Tomoaki Owase1, Yan Wu1, Yoshihiro takahashi1 (1.Nihon Univ.)

Keywords:high-pressure steam,anodic oxidation,low temperature growth