[12a-P12-1~7] 13.3 Insulator technology

[12a-P12-2] Evaluation of hole trapping characteristics of MONOS structures using the constant current carrier injection method

〇(M1)Shin Tanaka¹, Shinji Naito¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

Keywords:monos,silicon ntride,hole trapping