The 62nd JSAP Spring Meeting, 2015

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Poster presentation

13 Semiconductors » 13.3 Insulator technology

[12a-P12-1~7] 13.3 Insulator technology

Thu. Mar 12, 2015 9:30 AM - 11:30 AM P12 (Gymnasium)

9:30 AM - 11:30 AM

▲ [12a-P12-6] Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks

〇(D)ChihYu Chang1, 3, Osamu Ichikawa2, 3, Takenori Osada2, 3, Hisashi Yamada2, 3, Mitsuru Takenaka1, 3, Shinichi Takagi1, 3 (1.The Univ. of Tokyo, 2.Sumitomo Chemical, 3.JST-CREST)

Keywords:InGaAs,Gate stacks,La2O3