[14a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

[14a-A29-2] Variability suppression of FinFETs by milling fin-channel using IBE

〇Takashi Matsukawa¹, Kazuhiko Endo¹, Hiroshi Akasaka², Yasushi Kamiya², Masayoshi Ikeda², Koji Tsunekawa², Takashi Nakagawa², Yongxun Liu¹, Meishoku Masahara¹ (1.AIST, 2.Canon Anelva)

Keywords:FinFET,ion beam etching,variability