Effects of Ge substrate orientation on laser doping in phosphoric acid solution

Kouta Takahashi

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Oral presentation

13 Semiconductors » 13.4 Si wafer processing /MEMS/Integration technology

[14a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

Sat. Mar 14, 2015 9:00 AM - 12:00 PM A29 (6A-204)

9:45 AM - 10:00 AM

[14a-A29-4] Effects of Ge substrate orientation on laser doping in phosphoric acid solution

〇Kouta Takahashi¹, Masashi Kurosawa^1,², Hiroshi Ikenoue³, Shigehisa Shibayama^1,⁴, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,⁵ (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow (PD), 3.Grad. Sch. of ISEE, Kyushu Univ., 4.JSPS Research Fellow (DC), 5.EcoTopia Science Institute, Nagoya Univ)

Keywords:doping,Germanium