[14a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

△ [14a-A29-6] On the Origin of the Gate Oxide Failure Evaluated by Raman Spectroscopy

〇Ryo Yokogawa¹, Motohiro Tomita^{1, 3}, Toshikazu Mizukoshi², Takehiro Hirano², Kenichiro Kusano², Katsuhiro Sasaki², Atsusi Ogura¹ (1.Meiji Univ., 2.LAPIS Semiconductor Miyagi, 3.JSPS Research Fellow DC)

Keywords:semiconductor,Raman Spectroscopy,gate oxide failure