[14a-B1-1~9] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

△ [14a-B1-3] The effect of pressure of GaN bulk crystal growth by acidic ammonothermal method

〇kouhei kurimoto^{1, 2}, quanxi bao^{1, 2}, makoto saito^{1, 3}, daisuke tomida¹, mizuki ito¹, yoshiki yamazaki¹, kazunobu kojima¹, yuji kagamitani³, rinzo kayano², toru ishiguro¹, shigefusa chichibu¹ (1.IMRAM-Tohoku Univ., 2.The Japan Steel Works, 3.Mitsubishi Chemical Corporation)

Keywords:gallium nitride,acidic ammonothermal method