Symposium

[14a-B1-1~9] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

Sat. Mar 14, 2015 8:30 AM - 11:45 AM B1 (6B-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:30 AM - 9:00 AM

[14a-B1-1] Creation of nitride singular structures by pulsed excitation deposition

〇Hiroshi Fujioka^1,^2,³, Kohei Ueno¹, Atsushi Kobayashi¹, Jistuo Ohta¹ (1.the univ. of Tokyo, 2.JST-CREST, 3.JST-ACCEL)

9:00 AM - 9:30 AM

[14a-B1-2] GaN-based transistors with periodic trench structure

〇Tamotsu Hashizume¹ (1.Hokkaido Univ.)

9:30 AM - 9:45 AM

△ [14a-B1-3] The effect of pressure of GaN bulk crystal growth by acidic ammonothermal method

〇kouhei kurimoto^1,², quanxi bao^1,², makoto saito^1,³, daisuke tomida¹, mizuki ito¹, yoshiki yamazaki¹, kazunobu kojima¹, yuji kagamitani³, rinzo kayano², toru ishiguro¹, shigefusa chichibu¹ (1.IMRAM-Tohoku Univ., 2.The Japan Steel Works, 3.Mitsubishi Chemical Corporation)

9:45 AM - 10:00 AM

△ [14a-B1-4] The impact of initial V/III ratio on reduction of threading dislocations in PAMBE-grown AlN layers on SiC substrates

〇Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

[14a-B1-5] Growth mechanism of N-face GaN (000-1) films by group-III-source flow-rate modulation epitaxy

〇Tetsuya Akasaka¹, ChiaHung Lin¹, Hideki Yamamoto¹ (1.NTT BRL)

Break （10:15 AM - 10:30 AM）

10:30 AM - 11:00 AM

[14a-B1-6] Study on improvement of LED performance by nanostructure

〇Satoshi Kamiyama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,² (1.Miejo Univ., 2.Nagoya Univ.)

11:00 AM - 11:15 AM

[14a-B1-7] Pulsed operation of VCSELs on AlInN/GaN DBR with high growth rate

〇Yugo Kozuka¹, Kazuki Ikeyama¹, Takanobu Akagi¹, Shou Iwayama¹, Keisuke Nakata¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,² (1.Meijo univ., 2.Akasaki Inst., Nagoya Univ.)

11:15 AM - 11:30 AM

[14a-B1-8] Optical-pumped lasing characteristics of InGaN MQW nanocolumns on AlGaN DBR

〇(PC)Shunsuke Ishizawa¹, Kai Motoyama¹, Katsumi Kishino^1,² (1.Sophia Univ., 2.Sophia Nanotech.)

11:30 AM - 11:45 AM

△ [14a-B1-9] Fabrication of InGaN-based visible light-emitting diodes using nearly strain-free GaN films on ScAlMgO₄(0001) substrates

〇(D)Takuya Ozaki¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Symposium

[14p-B1-1~6] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

Sat. Mar 14, 2015 12:45 PM - 3:00 PM B1 (6B-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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12:45 PM - 1:15 PM

[14p-B1-1] Introduction of Singular Structure of Group-III Nitrides by HVPE Using a Mixed System of III-Cl and III-Cl₃

〇Yoshinao Kumagai¹, Rie Togashi¹, Quang Tu Thieu², Hisashi Murakami¹, Bo Monemar^2,³, Akinori Koukitu¹ (1.Tokyo Univ. of A. & T., 2.TUAT GIRO, 3.Linkoping Univ.)

1:15 PM - 1:45 PM

[14p-B1-2] Bond enginering approach to singularity in crystals

〇Tomonori Ito¹ (1.Mie Univ.)

1:45 PM - 2:00 PM

[14p-B1-3] Extension of IQB Model to Electronic States in Compound Alloy Semiconductors

〇Yuzo Shinozuka¹, Masato Oda¹ (1.Wakayama Univ.)

2:00 PM - 2:15 PM

[14p-B1-4] Investigation of Critical Thickness for AlGaN/AlN Heterostructures using Time-resolved Photoluminescence Spectroscopy

〇(D)Shuhei Ichikawa¹, Yoshiya Iwata¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[14p-B1-5] High Output Power Deep Ultraviolet LEDs

〇Masatsugu Ichikawa^1,², Akira Fujioka¹, Takao Kosugi¹, Shinya Endo¹, Harunobu Sagawa¹, Hiroto Tamaki¹, Takashi Mukai¹, Miyuki Uomoto², Takehito Shimatsu^2,³ (1.Nichia Corporation, 2.FRIS, Tohoku Univ., 3.RIEC, Tohoku Univ.)

2:30 PM - 3:00 PM

[14p-B1-6] Development of high-efficiency deep-UV LEDs and THz-QCLs by introducing novel structural wide-bandgap semiconductor crystals

〇Hideki Hirayama¹, Noritoshi Maeda¹, Masafumi Jo¹, Wataru Terashima¹, Siro Toyoda^1,², Norihiko Kamata² (1.RIKEN, 2.Saitama Univ.)

Sessions

Symposium » Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

[14a-B1-1~9] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

[14a-B1-1] Creation of nitride singular structures by pulsed excitation deposition

[14a-B1-2] GaN-based transistors with periodic trench structure

△ [14a-B1-3] The effect of pressure of GaN bulk crystal growth by acidic ammonothermal method

△ [14a-B1-4] The impact of initial V/III ratio on reduction of threading dislocations in PAMBE-grown AlN layers on SiC substrates

[14a-B1-5] Growth mechanism of N-face GaN (000-1) films by group-III-source flow-rate modulation epitaxy

[14a-B1-6] Study on improvement of LED performance by nanostructure

[14a-B1-7] Pulsed operation of VCSELs on AlInN/GaN DBR with high growth rate

[14a-B1-8] Optical-pumped lasing characteristics of InGaN MQW nanocolumns on AlGaN DBR

△ [14a-B1-9] Fabrication of InGaN-based visible light-emitting diodes using nearly strain-free GaN films on ScAlMgO₄(0001) substrates

[14p-B1-1~6] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

[14p-B1-1] Introduction of Singular Structure of Group-III Nitrides by HVPE Using a Mixed System of III-Cl and III-Cl₃

[14p-B1-2] Bond enginering approach to singularity in crystals

[14p-B1-3] Extension of IQB Model to Electronic States in Compound Alloy Semiconductors

[14p-B1-4] Investigation of Critical Thickness for AlGaN/AlN Heterostructures using Time-resolved Photoluminescence Spectroscopy

[14p-B1-5] High Output Power Deep Ultraviolet LEDs

[14p-B1-6] Development of high-efficiency deep-UV LEDs and THz-QCLs by introducing novel structural wide-bandgap semiconductor crystals

Authentication

Sessions

Symposium » Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

[14a-B1-1~9] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

△ [14a-B1-3] The effect of pressure of GaN bulk crystal growth by acidic ammonothermal method

△ [14a-B1-4] The impact of initial V/III ratio on reduction of threading dislocations in PAMBE-grown AlN layers on SiC substrates

△ [14a-B1-9] Fabrication of InGaN-based visible light-emitting diodes using nearly strain-free GaN films on ScAlMgO4(0001) substrates

[14p-B1-1~6] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

Authentication

△ [14a-B1-9] Fabrication of InGaN-based visible light-emitting diodes using nearly strain-free GaN films on ScAlMgO₄(0001) substrates