The 62nd JSAP Spring Meeting, 2015

Presentation information

Symposium

Symposium » Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

[14a-B1-1~9] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

Sat. Mar 14, 2015 8:30 AM - 11:45 AM B1 (6B-101)

9:30 AM - 9:45 AM

[14a-B1-3] The effect of pressure of GaN bulk crystal growth by acidic ammonothermal method

〇kouhei kurimoto1, 2, quanxi bao1, 2, makoto saito1, 3, daisuke tomida1, mizuki ito1, yoshiki yamazaki1, kazunobu kojima1, yuji kagamitani3, rinzo kayano2, toru ishiguro1, shigefusa chichibu1 (1.IMRAM-Tohoku Univ., 2.The Japan Steel Works, 3.Mitsubishi Chemical Corporation)

Keywords:gallium nitride,acidic ammonothermal method