[14a-B1-1~9] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

△ [14a-B1-4] The impact of initial V/III ratio on reduction of threading dislocations in PAMBE-grown AlN layers on SiC substrates

〇Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

Keywords:crystal growth,Nitride semiconductor,MBE