10:00 AM - 10:15 AM
[14a-B1-5] Growth mechanism of N-face GaN (000-1) films by group-III-source flow-rate modulation epitaxy
Keywords:GaN,N-polar,hillock
Symposium
Symposium » Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-
Sat. Mar 14, 2015 8:30 AM - 11:45 AM B1 (6B-101)
10:00 AM - 10:15 AM
Keywords:GaN,N-polar,hillock