The 62nd JSAP Spring Meeting, 2015

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Symposium » Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

[14a-B1-1~9] Materials science of singularity in nitride semiconductors-Growth, processing and electronic application-

Sat. Mar 14, 2015 8:30 AM - 11:45 AM B1 (6B-101)

10:00 AM - 10:15 AM

[14a-B1-5] Growth mechanism of N-face GaN (000-1) films by group-III-source flow-rate modulation epitaxy

〇Tetsuya Akasaka1, ChiaHung Lin1, Hideki Yamamoto1 (1.NTT BRL)

Keywords:GaN,N-polar,hillock