[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

△ [14a-B4-1] Theoretical Investigation of Chemical Reaction Dynamics in SiC Etching Process via Quantum Chemical Molecular Dynamics Simulation

〇(D)Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Momoji Kubo¹ (1.Tohoku Univ.)

Keywords:silicon carbide,etching,molecular dynamics