Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

11:30 AM - 11:45 AM

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Naruhisa Miura¹, Shuhei Nakata¹, Satoshi Yamakawa¹ (1.Mitsubishi Electric Corp.)

Keywords:SiC,MOSFET,tunneling