The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

11:45 AM - 12:00 PM

[14a-B4-11] FLR Edge Termination for 3.3 kV SiC-MOSFET

〇Kohei Ebihara1, 2, Takaaki Tominaga1, 2, Kenji Hamada1, Shiro Hino1, 2, Hiroshi Watanabe1, 2, Naruhisa Miura1, Shuhei Nakata1, 2, Satoshi Yamakawa1, 2 (1.Mitsubishi Electric, 2.FUPET)

Keywords:SiC,edge termination,3.3kV