[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

[14a-B4-4] High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Precise Control of Cooling Rate during Atmospheric Pressure Thermal Plasma Jet Irradiation

〇(M2)KEISUKE MARUYAMA¹, HIROAKI HANAFUSA¹, SHOHEI HAYASHI¹, HIDEKI MURAKAMI¹, SEIICHIRO HIGASHI¹ (1.Hiroshima Univ.)

Keywords:semiconductor,silicon carbide,activation