The 62nd JSAP Spring Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

10:30 AM - 10:45 AM

[14a-B4-7] Electrical Characteristics of SiC Schottky Diode with Ti and TiC Electrodes

〇(B)Tomoyuki Suzuki1, Mari Okamoto2, Shu Munekiyo2, Kuniyuki Kakushima2, Yoshinori Kataoka2, Akira Nishiyama2, Nobuyuki Sugii2, Hitoshi Wakabayashi2, Kazuo Tsutsui2, Kenji Natori1, Hiroshi Iwai1 (1.Tokyo Tech. FRC, 2.Tokyo Tech. IGSSE)

Keywords:Schottky diode,Silicon Carbide,Electrode