The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

11:15 AM - 11:30 AM

[14a-B4-9] Characterization of 3.3 kV 4H-SiC MOSFETs

〇Mitsuhiko Sakai1, Kosuke Uchida1, Toru Hiyoshi1, Keiji Wada1, Masaki Furumai1, Takashi Tsuno1, Yasuki Mikamura1 (1.Sumitomo Electric)

Keywords:4H-SiC,MOSFET