The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

11:00 AM - 11:15 AM

[14a-B4-8] High energy ion implantation process on 6 inch 4H-SiC substrates using SiO2 mask

〇TAKU HORII1, RYOSUKE KUBOTA1, KEIJI WADA1, SO TANAKA1, TAKESHI SEKIGUCHI1, YASUKI MIKAMURA1 (1.Sumitomo Electric Industries, Ltd.)

Keywords:SiC,ion implantation,MOSFET