The 62nd JSAP Spring Meeting, 2015

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6 Thin Films and Surfaces » 6.3 Oxide electronics

[14a-D10-1~9] 6.3 Oxide electronics

Sat. Mar 14, 2015 9:30 AM - 11:45 AM D10 (16-305)

10:45 AM - 11:00 AM

[14a-D10-6] The control of switching property in HfO2-CB-RAM by the replacement of solvents –part 2-

〇(M2)Masato Yoshihara1, Akinori Harada1, Toshiyuki Itoh1, Satoru Kishida1, 2, Kentaro Kinoshita1, 2 (1.Tottori Univ., 2.TiFREC)

Keywords:ReRAM,Impedance,Conducting-Bridge RAM