[14a-D7-1~12] 17.4 Device applications

△ [14a-D7-2] High carrier mobility graphene-channel FET using SiN gate stack

〇Gen Tamamushi¹, Kenta Sugawara¹, Mastura binti Hussin¹, Tetsuya Suemitsu¹, Ryota Suto¹, Hirokazu Fukidome¹, Maki Suemitsu¹, Taiichi Otsuji¹ (1.RIEC, Tohoku Univ.)

Keywords:Graphene,FET,Mobility