[14p-A29-1~8] 13.4 Si wafer processing /MEMS/Integration technology

[14p-A29-3] Electric properties of thermal oxide formed by minimal resistance furnace(III)

〇Katsuhiko Nakato¹, Fumito Imura¹, Hitoshi Asano¹, Shinnosuke Suzuki^{1, 3}, Shogo Matsuda^{1, 3}, Ayami Yaginuma^{1, 3}, Kiyohiko Morikawa^{1, 3}, Masashi Hattori^{1, 3}, Shinichi Ikeda^{1, 2}, Sommawan Khumpuang^{1, 2}, Shiro Hara^{1, 2} (1.MINIMAL, 2.AIST, 3.Koyo Thermo System)

Keywords:minimal