Kenta Watanabe

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

11:30 AM - 11:45 AM

△ [16a-B1-10] Impact of deposition temperature of Al based gate insulators in AlGaN/GaN MOS-HEMTs

〇(M1)Kenta Watanabe¹, Mikito Nozaki¹, Takahiro Yamada¹, Satoshi Nakazawa², Yoshiharu Anda², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

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