Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▼ [16a-B1-1] AlGaN/GaN HEMTs on Free-standing GaN Substrates with Critical Electric Field of 1.2 MV/cm

〇(M2)JIEHONG NG¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.University of Fukui)

9:15 AM - 9:30 AM

△ [16a-B1-2] Effect of drain electrode shape on breakdown voltage in AlGaN/GaN HEMTs

〇Taisei Yamazaki¹, Yudai Suzuki¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.University of Fukui)

9:30 AM - 9:45 AM

△ [16a-B1-3] Effect of groove depth on current collapse in 3DFP AlGaN/GaN HEMTs

〇(M2)atsuya suzuki¹, Asubar Joel¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.University of Fukui)

9:45 AM - 10:00 AM

[16a-B1-4] Elucidating the mechanism of current collapse in GaN-HEMT using the operando microspectroscopy

〇Keiichi Omika¹, Yasunori Tateno², Tsuyoshi Kouchi², Tsutomu Komatani³, Naoka Nagamura⁴, Syun Konno⁵, Yoshinobu Takahashi⁵, Masato Kotsugi⁵, Koji Horiba⁶, Masaharu Oshima⁷, Maki Suemitsu¹, Hirokazu Fukidome¹ (1.Tohoku Univ. RIEC, 2.Sumitomo Electric Industries, Ltd., 3.Sumitomo Electric Device Innovations, Inc., 4.NIMS, 5.Tokyo University of Science, 6.KEK/PF, 7.The University of Tokyo)

10:00 AM - 10:15 AM

[16a-B1-5] Characterization of trap in AlGaN/GaN HEMT on Si by drain current DLTS and MCTS

〇Kouta Takabayashi¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tech.)

10:15 AM - 10:30 AM

[16a-B1-6] Characterization of deep-level traps by frequency and bias-voltage dependence of junction capacitance in homoepitaxial lightly-doped n-type GaN

〇Jun Suda¹, Masahiro Horita¹ (1.Kyoto Univ.)

10:45 AM - 11:00 AM

△ [16a-B1-7] Impact of Threading Dislocations on Electrical Properties of MOVPE-grown n-type GaN

〇Naoki Sawada¹, Tetsuo Narita², Tsutomu Uesugi², Tetsu Kachi³, Masahiro Horita¹, Jun Suda¹ (1.Kyoto Univ., 2.TOYOTA Cent. R&D Labs., 3.Nagoya Univ.)

11:00 AM - 11:15 AM

[16a-B1-8] ALD Temperature Dependence of Surface Potential Fluctuation at GaN MOS Interfaces

〇Noriyuki Taoka¹, Toshiharu Kubo², Toshikazu Yamada¹, Takashi Egawa², Mitsuaki Shimizu¹ (1.AIST, 2.Nagoya Inst. Tech)

11:15 AM - 11:30 AM

[16a-B1-9] Temperature dependence of Hall-effect measurement for Mg-doped p-type GaN and experimental estimation of effective density of states in valence band

〇Masahiro Horita¹, Shinya Takashima², Ryo Tanaka², Katsunori Ueno², Masaharu Edo², Tokio Takahashi³, Mitsuaki Shimizu³, Jun Suda³ (1.Kyoto Univ., 2.Fuji Electric, 3.AIST)

11:30 AM - 11:45 AM

△ [16a-B1-10] Impact of deposition temperature of Al based gate insulators in AlGaN/GaN MOS-HEMTs

〇(M1)Kenta Watanabe¹, Mikito Nozaki¹, Takahiro Yamada¹, Satoshi Nakazawa², Yoshiharu Anda², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

11:45 AM - 12:00 PM

[16a-B1-11] Photoemission Study of Remote Plasma CVD SiO₂/GaN Interfaces

〇TRUYEN XUAN NGUYEN¹, Akio Ohta¹, Katsunori Makihara¹, Mitsuhisa Ikeda¹, Seichi Miyazaki¹ (1.Nagoya Univ.)

12:00 PM - 12:15 PM

[16a-B1-12] Visualization of Two-Dimensional Electron Gas Layer Formed at GaN/AlGaN Interface by High Sensitivity Electron Holography

〇KAZUO YAMAMOTO¹ (1.JFCC)

12:15 PM - 12:30 PM

[16a-B1-13] Current AFM characterization of AlN initial layer in AlGaN/GaN HEMT on Si substrate

〇Ken Kakamu¹, Yuya Yamaoka^1,2, Takashi Egawa¹, Akinori Ubukata², Toshiya Tabuchi², Koh Matsumoto² (1.Nagoya Inst. of Tech., 2.Taiyo Nippon Sanso Corp.)

Session information