Jun Suda

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

10:15 AM - 10:30 AM

[16a-B1-6] Characterization of deep-level traps by frequency and bias-voltage dependence of junction capacitance in homoepitaxial lightly-doped n-type GaN

〇Jun Suda¹, Masahiro Horita¹ (1.Kyoto Univ.)