JIEHONG NG

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

9:00 AM - 9:15 AM

▼ [16a-B1-1] AlGaN/GaN HEMTs on Free-standing GaN Substrates with Critical Electric Field of 1.2 MV/cm

〇(M2)JIEHONG NG¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.University of Fukui)