Ken Kakamu

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

12:15 PM - 12:30 PM

[16a-B1-13] Current AFM characterization of AlN initial layer in AlGaN/GaN HEMT on Si substrate

〇Ken Kakamu¹, Yuya Yamaoka^1,2, Takashi Egawa¹, Akinori Ubukata², Toshiya Tabuchi², Koh Matsumoto² (1.Nagoya Inst. of Tech., 2.Taiyo Nippon Sanso Corp.)

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