17:00 〜 17:15 ▼ [14p-A33-13] Carrier transport properties of MoS2 field-effect transistors produced by multi-step chemical vapor deposition method 〇(DC)Sinae Heo1,2、Ryoma Hayakawa1、Yutaka Wakayama1,2 (1.NIMS、2.Kyushu Univ.)