5:00 PM - 5:15 PM ▼ [14p-A33-13] Carrier transport properties of MoS2 field-effect transistors produced by multi-step chemical vapor deposition method 〇(DC)Sinae Heo1,2, Ryoma Hayakawa1, Yutaka Wakayama1,2 (1.NIMS, 2.Kyushu Univ.)