Yohei Kagoyama

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:15 PM C302 (Nikko Houou)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[16a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

10:00 AM - 10:15 AM

[16a-C302-5] Comparison between dry and wet oxide on (000-1)4H-SiC MOSFETs studied by electrically detected magnetic resonance

〇(D)Yohei Kagoyama¹, Mitsuo Okamoto², Hironori Yoshioka², Shinsuke Harada², Takahiro Yamasaki³, Takao Ohno³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

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