SANghee YOON

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Speaker, Author, Co-Author

Tue. Sep 13, 2016 1:45 PM - 5:00 PM B13 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.5 Semiconductor devices and related technologies

[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

2:15 PM - 2:30 PM

[13p-B13-3] Change in electrical characteristics of InGaAs tunnel FETs by gate current stress

〇SANghee YOON^1,2, CHIH-YU CHANG^1,2, DAEHWAN AHN^1,2, TAKENAKA MITSURU^1,2, SHINICHI TAKAGI^1,2 (1.Tokyo University, 2.JST CREST)