Tohoru Matsubara

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Speaker, Author, Co-Author

Wed. Sep 14, 2016 1:00 PM - 7:00 PM A21 (Main Hall A)

Symposium (Oral)
| Symposium
| Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

3:45 PM - 4:00 PM

[14p-A21-7] STEM evaluation of atomic arrangements on dislocation core in GaN layer

〇Tohoru Matsubara^1,2, Kohei Sugimoto¹, Shin Goubara¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University, 2.UBE Scientific Analysis Lab.)

Tue. Sep 13, 2016 1:15 PM - 6:00 PM A21 (Main Hall A)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[13p-A21-1~16] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM

[13p-A21-11] Visualization of dislocation density in HVPE-grown GaN using facet controlling technique

〇Tohoru Matsubara¹, Shin Goubara¹, Kota Yukizane¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University)