Shin Goubara

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Speaker, Author, Co-Author

Tue. Sep 13, 2016 1:15 PM - 6:00 PM A21 (Main Hall A)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[13p-A21-1~16] 15.4 III-V-group nitride crystals

5:00 PM - 5:15 PM

[13p-A21-13] Mask width dependence of selective growth of GaN and mechanism of
facet formation via Hydride Vapor Phase Epitaxy

〇Shin Goubara¹, Kota Yukizane¹, Tohoru Matsubara¹, Norihiro Itagaki¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University)