Kisho Nakamura

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Speaker, Author, Co-Author

Wed. Sep 14, 2016 1:30 PM - 3:30 PM P10 (Exhibition Hall)

Poster presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

1:30 PM - 3:30 PM

△ [14p-P10-9] Influence of NiO buffer layer on solid phase epitaxy of β-Ga₂O₃ thin films by laser annealing at room temperature

〇Kisho Nakamura¹, Hiroki Uchida¹, Nobuo Tuchimine², Kouji Koyama³, Satoru Kaneko^4,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Inst. of Tech., 2.TOSHIMA Manu., 3.Namiki Precision Jewel, 4.Kanagawa Ind. Tech. Center)