AMINE ELMOUTAOUAKIL

→ Search for AMINE ELMOUTAOUAKIL in Google Scholar

Speaker, Author, Co-Author

Wed. Sep 14, 2016 1:30 PM - 3:30 PM P7 (Exhibition Hall)

Poster presentation
| 13 Semiconductors
| 13.6 Semiconductor English Session

[14p-P7-1~2] 13.6 Semiconductor English Session

1:30 PM - 3:30 PM

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

〇AMINE ELMOUTAOUAKIL¹, Takuya HOSHI¹, Hiroki SUGIYAMA¹, Hideaki MATSUZAKI¹ (1.NTT Device Technology Labs.)