Satoshi Nakano

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 9:00 AM - 11:45 AM A23 (201B)

Oral presentation
| 15 Crystal Engineering
| 15.8 Crystal evaluation, impurities and crystal defects

[15a-A23-1~10] 15.8 Crystal evaluation, impurities and crystal defects

9:00 AM - 9:15 AM

[15a-A23-1] Dependence of growth orientation for dislocation density and residual strain during silicon single crystal growth

〇Satoshi Nakano¹, Bing Gao¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)